FREQUENCY-DEPENDENT RELAXATION-TIME OF FREE-CARRIERS IN INP

被引:13
作者
JENSEN, B
机构
[1] Department of Physics, Boston University, Boston
关键词
D O I
10.1063/1.326722
中图分类号
O59 [应用物理学];
学科分类号
摘要
At frequencies higher than 200-300 cm-1 in InP, the classical Drude theory fails to predict the observed wavelength dependence of the absorption coefficient and hence the optical conductivity to which it is proportional. In this paper, the optical conductivity is calculated for InP at 300 °K as a function of frequency and carrier concentration by use of a quantum extension of the Boltzmann transport equation which reduces to the quasiclassical Boltzmann equation in the limit of low frequencies and elastic scattering mechanisms. The conductivity is expressed in terms of a frequency-dependent relaxation time which reduces to a constant in the far infrared. It is given as a function of carrier concentration over the spectral region from 218 to 2180 cm-1 for carrier concentrations from 4.69×1015 to 2.13×1018 cm-3, and used to calculate the reflectivity spectrum over the same range of frequencies and concentrations. The low-frequency limit is used to estimate the dc mobility as a function of concentration, and the effect of compensation on mobility is calculated for the purest materials. Comparison with experimental results is given.
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页码:5800 / 5804
页数:5
相关论文
共 25 条
[2]   INTRABAND AND INTERBAND FREE-CARRIER ABSORPTION AND FUNDAMENTAL ABSORPTION EDGE IN N-TYPE INP [J].
DUMKE, WP ;
LORENZ, MR ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (12) :4668-&
[3]   QUANTUM THEORY OF FREE CARRIER ABSORPTION [J].
DUMKE, WP .
PHYSICAL REVIEW, 1961, 124 (06) :1813-&
[4]   FREE-CARRIER ABSORPTION OF NORMAL-TYPE ZNSE-AL [J].
DUTT, BV ;
KIM, OK ;
SPITZER, WG .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :2110-2111
[5]   POINT-DEFECTS, LOCALIZED VIBRATIONAL MODES, AND FREE-CARRIER ABSORPTION OF AL-DOPED CDTE [J].
DUTT, BV ;
ALDELAIMI, M ;
SPITZER, WG .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :565-572
[6]  
Fan H. Y., 1967, SEMICONDUCTORS SEMIM, V3
[7]   FREE-CARRIER INFRARED ABSORPTION AND DETERMINATION OF DEFORMATION-POTENTIAL CONSTANT IN N-TYPE INSB [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (06) :777-&
[8]   INFRARED REFLECTANCE STUDIES OF BULK AND EPITAXIAL-FILM N-TYPE GAAS [J].
HOLM, RT ;
GIBSON, JW ;
PALIK, ED .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :212-223
[9]  
IWASA S, 1964, P INT C PHYS SEMICON, P1007
[10]   INFRARED-ABSORPTION SPECTRUM OF N-TYPE GAAS [J].
JENSEN, B .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 86 (01) :291-301