RAMAN-SPECTRA OF IN1-XGAXP UNDER HIGH-PRESSURE

被引：2

作者：

NAKAHARA, J

KATO, T

MINOMURA, S

ISHIDA, T

机构：

[1] Dept. of Phys., Hokkaido Univ., Sapporo

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 06期

关键词：

D O I：

10.1088/0268-1242/6/6/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The phonon modes in In1-xGa(x)P (InGaP) were investigated under high pressure by Raman scattering spectroscopy. In InGaP a pressure-induced structure was observed between LO and TO modes. The origin of this structure is discussed by means of dielectric analysis, pressure dependence and composition dependence. We conclude that a part of the high energy side of this additional structure is caused by a disorder-activated zone boundary optical phonon.

引用

页码：496 / 499

页数：4

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