HOT-CARRIER TRANSPORT IN P-GAAS

Minority-electron transport properties in p-GaAs have been investigated using time-of-flight (TOF) and time-integrated/time-resolved photoluminescence (PL) measurements. It was found that with an increase in hole concentration the drift velocity decreases, a thermal non-equilibrium energy state exists between electrons and holes, and the energy relaxation time decreases. By combining these experimental data with a Monte Carlo calculation the scattering mechanisms in highly doped semiconductors were clarified. It was also found that energy and momentum transfers during the electron-hole interaction play an important role in the minority-electron transport for p-GaAs. This investigation revealed that the combination of an experimental approach using optical techniques, such as TOF or PL, with a theoretical approach such as a Monte Carlo calculation is indispensable in clarifying hot-carrier transport.