LOCALIZATION AND COMPOSITION OF IMPURITY CLUSTERS IN SILICON AND THEIR INFLUENCE ON ITS EMISSION PROPERTIES

被引：6

作者：

BIBIK, VF

BORZIAK, PG

NAKHODKIN, NG

YATSENKO, AF

ZYKOV, GA

机构：

[1] ACAD SCI UKSSR, PHYS INST, KIEV, UKSSR

[2] SHEVCHENKO STATE UNIV, PHYS DEPT, KIEV, UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1002/pssa.2210160116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：151 / 160

页数：10

共 16 条

[1]

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ELDRIDGE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+

[3]

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[4] PULSED T-F EMISSION ELECTRON PROJECTION MICROSCOPY [J].

DYKE, WP ;

BARBOUR, JP .

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[5] SILICON-SILICON DIOXIDE SYSTEM [J].

GRAY, PV .

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[6]

KOMAR AP, 1962, FIZ TVERD TELA, V4, P1346

[7]

KOTTREL AK, 1950, DISLOKATSII PLASTICH

[8] LOCAL CHANGES OF THE WORK FUNCTION OF GERMANIUM AND SILICON DUE TO DISLOCATIONS [J].

LAGOWSKI, J .

PHYSICA STATUS SOLIDI, 1964, 5 (03) :555-561

[9] SOME ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE SYSTEM [J].

LAMB, DR .

THIN SOLID FILMS, 1970, 5 (04) :247-&

[10]

LIASHENKO VI, 1968, ELECTRONNYE YAVLENIY

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