RADIATIVE RECOMBINATION IN SEMICONDUCTORS

被引:5
作者
VAVILEV, VS
机构
来源
USPEKHI FIZICHESKIKH NAUK | 1959年 / 68卷 / 02期
关键词
D O I
10.3367/UFNr.0068.195906b.0247
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:247 / 260
页数:14
相关论文
共 46 条
[1]  
ADIROVICH EI, 1956, NEKOTORYE VOPROSY TE, pCH6
[2]   LEMISSION INFRAROUGE DU GERMANIUM [J].
AIGRAIN, P ;
LAGUILLAUME, CBA .
JOURNAL DE PHYSIQUE ET LE RADIUM, 1956, 17 (8-9) :709-711
[3]  
BENOITALAGUILLA.C, 1956, CR HEBD ACAD SCI, V243, P704
[4]  
BENOUT C, 1959, PHYS CHEM SOLIDS, V8
[5]  
BENOUT C, 1958, MEZHDUNARODNOI K POL
[6]   ELECTRICAL AND OPTICAL PROPERTIES OF INTERMETALLIC COMPOUNDS .2. GALLIUM ANTIMONIDE [J].
BLUNT, RF ;
HOSLER, WR ;
FREDERIKSE, HPR .
PHYSICAL REVIEW, 1954, 96 (03) :576-577
[7]  
BONCHBRUEVICH VL, 1957, PROBLEMY FIZIKI PO 4
[8]   RADIATIVE TRANSITIONS IN SEMICONDUCTORS [J].
BRAUNSTEIN, R .
PHYSICAL REVIEW, 1955, 99 (06) :1892-1893
[9]   OPTICAL EFFECTS IN BULK SILICON AND GERMANIUM [J].
BRIGGS, HB .
PHYSICAL REVIEW, 1950, 77 (02) :287-287
[10]  
BURSHTEIN E, 1957, FIZIKA POLUPROVODNIK