VACANCY ENHANCED DIFFUSION IN SILICON - EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES

被引：33

作者：

BARUCH, P

SAINTESPRIT, R

CONSTANTINESCU, C

PFISTER, JC

机构：

来源：

DISCUSSIONS OF THE FARADAY SOCIETY | 1961年 / 31期

关键词：

D O I：

10.1039/df9613100076

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：76 / &

共 25 条

[1] THE OBSERVATION OF VACANCY SOURCES IN METALS
BARNES, RS
REDDING, GB
COTTRELL, AH
[J]. PHILOSOPHICAL MAGAZINE, 1958, 3 (25): : 97 - &
[2] RADIATION ORDERING IN CU3AU
BLEWITT, TH
COLTMAN, RR
[J]. ACTA METALLURGICA, 1954, 2 (03): : 549 - 551
[3] GOLD-INDUCED CLIMB OF DISLOCATIONS IN SILICON
DASH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2275 - 2283
[4] DIENES, 1957, RADIATION EFFECTS SO
[5] RADIATION ENHANCED DIFFUSION IN SOLIDS
DIENES, GJ
DAMASK, AC
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) : 1713 - 1721
[6] DUGDALE, 1952, PHIL MAG, V43, P1216
[7] FROMAGEOT, P 1961 PCSD
[8] FROSH, 1957, J ELECTROCH SOC, V104, P547
[9] KURTZ, 1958, J APPL PHYS, V29, P1456
[10] LECLAIRE, 1956, PMP, V4, P265