STUDY OF DEFECTS IN CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS BY CROSS-SECTIONAL CATHODOLUMINESCENCE

被引：11

作者：

CREMADES, A

DOMINGUEZADAME, F

PIQUERAS, J

机构：

[1] Departamento de Física de Materiales, Facultad de Físicas, Universidad Complutense

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.354189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cathodoluminescence (CL) in the scanning electron microscope has been used to study the upper surface and cross-sectional samples of chemical vapor deposited diamond films. The CL emission is mainly localized at the grain boundaries of the columnar grains. The concentration of dislocation related radiative centers is higher in boundaries parallel to the growth axis than in boundaries parallel to the sample surface. The opposite occurs with the concentration of centers related to the presence of nitrogen.

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页码：5726 / 5728

页数：3

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