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PROGRESS IN LONG-WAVELENGTH STRAINED-LAYER INGAAS(P) QUANTUM-WELL SEMICONDUCTOR-LASERS AND AMPLIFIERS

被引：163
作者：
THIJS, PJA
TIEMEIJER, LF
BINSMA, JJM
VANDONGEN, T
机构：
[1] Philips Optoelectronics Centre, 5600 JA Eindhoven
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 02期
关键词：
D O I：
10.1109/3.283797
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devices are outperformed, while a high reliability is maintained.
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收藏
页码：477 / 499
页数：23
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