PROGRESS IN LONG-WAVELENGTH STRAINED-LAYER INGAAS(P) QUANTUM-WELL SEMICONDUCTOR-LASERS AND AMPLIFIERS

被引：163

作者：

THIJS, PJA

TIEMEIJER, LF

BINSMA, JJM

VANDONGEN, T

机构：

[1] Philips Optoelectronics Centre, 5600 JA Eindhoven

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 02期

关键词：

D O I：

10.1109/3.283797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devices are outperformed, while a high reliability is maintained.

引用

页码：477 / 499

页数：23

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