FURTHER LOWERING OF WORK FUNCTION BY OXYGEN-ADSORPTION ON THE K/SI(001) SURFACE

被引：66

作者：

MORIKAWA, Y ^{[1
]}

机构：

[1] JOINT RES CTR ATOM TECHNOL, TSUKUBA, IBARAKI 305, JAPAN

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.51.14802

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied oxygen and potassium coadsorption on the Si(001) surface with first-principles molecular dynamics. The present calculation gives a strong support to the structural model based on double-layer K adsorption. Oxygen adsorption on the K/Si(001) surface reduces the work function by 0.7 eV and activates the negative electron affinity in accord with experimental results. The oxygen atoms are adsorbed slightly below the potassium atoms and accumulate a valence charge around the surface region, leading to large polarization of K atoms and further lowering of the work function. © 1995 The American Physical Society.

引用

页码：14802 / 14805

页数：4

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