AUGER-LIKE RESONANT INTERFERENCE IN RAMAN SCATTERING FROM 1- AND 2-PHONON STATES OF BATIO3

被引：97

作者：

ROUSSEAU, DL

PORTO, SPS

机构：

[1] Departments of Physics and Electrical Engineering, University of Southern California, Los Angeles

来源：

PHYSICAL REVIEW LETTERS | 1968年 / 20卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.20.1354

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Resonant interference between one- and two-phonon states has been observed in BaTiO3, and has been shown to obey the quantum mechanical formalism developed by Fano for Auger processes. By selecting different components of the differential polarizability tensor and by changing the propagation direction, the degree of interference could be varied over a wide range. The linewidth and line-profile parameters were determined for several different crystal orientations. © 1968 The American Physical Society.

引用

页码：1354 / &

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