TIME-RESOLVED LUMINESCENCE OF GAAS/ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATES

被引：5

作者：

COLOCCI, M ^{[1
]}

GURIOLI, M ^{[1
]}

VINATTIERI, A ^{[1
]}

DEPARIS, C ^{[1
]}

MASSIES, J ^{[1
]}

NEU, G ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.103419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of GaAs substrate misorientation from the (001) plane on the photoluminescence spectra of GaAs/AlGaAs quantum well structures grown by molecular beam epitaxy have been investigated using time-resolved spectroscopy. It is shown, by comparison with a (001) heterostructure having a high impurity content, that the broadening of photoluminescence spectra, observed when the substrate misorientation is towards the (111)As plane, is very unlikely due to a preferential impurity incorporation but is rather originated from the growth mechanism on this type of surface.

引用

页码：783 / 785

页数：3

共 18 条

[1] TIME-RESOLVED PHOTOLUMINESCENCE OF GAAS/GAALAS MQW STRUCTURES UNDER PICOSECOND EXCITATION [J].

ANGELONI, L ;

CHIARI, A ;

COLOCCI, M ;

FERMI, F ;

GURIOLI, M ;

QUERZOLI, R ;

VINATTIERI, A .

SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (04) :549-554

[2]

Chen Y. J., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V792, P162, DOI 10.1117/12.940836

[3] TEMPERATURE-DEPENDENCE OF EXCITON LIFETIMES IN GAAS/ALGAAS QUANTUM-WELL STRUCTURES [J].

COLOCCI, M ;

GURIOLI, M ;

VINATTIERI, A ;

FERMI, F ;

DEPARIS, C ;

MASSIES, J ;

NEU, G .

EUROPHYSICS LETTERS, 1990, 12 (05) :417-422

[4]

FELDMANN J, 1988, PHYS REV LETT, V60, P243, DOI 10.1103/PhysRevLett.60.243.4

[5] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS [J].

FELDMANN, J ;

PETER, G ;

GOBEL, EO ;

DAWSON, P ;

MOORE, K ;

FOXON, C ;

ELLIOTT, RJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (20) :2337-2340

[6]

FELDMANN J, 1987, J PHYS-PARIS, V48, P517

[7] SMOOTH, PSEUDOSMOOTH, AND ROUGH GAAS/ALXGA1-XAS INTERFACES - EFFECT OF SUBSTRATE MISORIENTATION [J].

MASSIES, J ;

DEPARIS, C ;

NERI, C ;

NEU, G ;

CHEN, Y ;

GIL, B ;

AUVRAY, P ;

REGRENY, A .

APPLIED PHYSICS LETTERS, 1989, 55 (25) :2605-2607

[8] OPTICAL STUDIES OF IMPURITY TRAPPING AT THE GAALAS GAAS INTERFACE IN QUANTUM WELL STRUCTURES [J].

MEYNADIER, MH ;

BRUM, JA ;

DELALANDE, C ;

VOOS, M ;

ALEXANDRE, F ;

LIEVIN, JL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4307-4312

[9] ANISOTROPIC SURFACE MIGRATION OF GA ATOMS ON GAAS(001) [J].

OHTA, K ;

KOJIMA, T ;

NAKAGAWA, T .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :71-74

[10] THE MEANDERING OF STEPS ON GAAS(100) [J].

PUKITE, PR ;

PETRICH, GS ;

BATRA, S ;

COHEN, PI .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :269-272

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