THEORY OF INFLUENCE OF SURFACE STATES ON IMPEDANCE OF A SEMICONDUCTOR-INSULATOR INTERFACE

被引：6

作者：

FORLANI, F

MINNAJA, N

PAGIOLA, E

机构：

来源：

PHYSICA STATUS SOLIDI | 1966年 / 17卷 / 02期

关键词：

D O I：

10.1002/pssb.19660170222

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：657 / +

页数：1

共 33 条

[1] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J].

ATALLA, MM ;

TANNENBAUM, E .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04) :933-946

[2]

CODDINGTON EA, 1955, THEORY ORDINARY DIFF, P92

[3] NOTE ON IMPEDANCE OF SEMICONDUCTOR SURFACES IN MOS STRUCTURES [J].

FORLANI, F ;

MINNAJA, N ;

PAGIOLA, E .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (10) :1664-&

[4] CONDUCTION PHENOMENA IN SI-SIO2-AL STRUCTURES [J].

FORLANI, F ;

MINNAJA, N .

PHYSICA STATUS SOLIDI, 1964, 5 (02) :407-419

[5] PHOTOVOLTAIC EFFECT IN PHOTOCONDUCTOR-DIELECTRIC-METAL SANDWICHES [J].

FORLANI, F ;

MINNAJA, N .

PHYSICA STATUS SOLIDI, 1965, 8 (01) :177-+

[6]

FORLANI F, 1965, REV GENER ELECTR, V74, P997

[7]

FORLANI F, TO BE PUBLISHED

[8]

GIBSON AF, 1960, PROGRESS SEMICOND ED, V5

[9] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J].

HOFSTEIN, SR ;

WARFIELD, G .

SOLID-STATE ELECTRONICS, 1965, 8 (03) :321-+

[10] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :222-+

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