共 43 条
- [1] Bachelet G. B., 1987, 18th International Conference on the Physics of Semiconductors, P801
- [3] SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS [J]. PHYSICAL REVIEW B, 1981, 24 (02): : 915 - 925
- [5] CALCULATION OF THE TOTAL ENERGY OF CHARGED POINT-DEFECTS USING THE GREENS-FUNCTION TECHNIQUE [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1853 - 1866
- [8] BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1129 - 1132
- [9] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852
- [10] LATTICE-DISTORTIONS INDUCED BY B, P, AS AND SB IN SILICON [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1984, 40 : C341 - C341