TAPERED WINDOWS IN PHOSPHORUS-DOPED SIO2 BY ION-IMPLANTATION

被引：26

作者：

NORTH, JC

MCGAHAN, TE

RICE, DW

ADAMS, AC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 07期

关键词：

D O I：

10.1109/T-ED.1978.19175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：809 / 812

页数：4

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[8] TAPERED WINDOWS IN SIO2 BY ION-IMPLANTATION [J].

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Moore Gordon E., 1974, U.S. Patent, Patent No. [3,825,442, 3825442]

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