ELLIPSOMETRIC ASSESMENT OF (GA,AL) AS-GAAS EPITAXIAL LAYERS DURING THEIR GROWTH IN AN ORGANOMETALLIC VPE SYSTEM

被引：34

作者：

THEETEN, JB

HOTTIER, F

HALLAIS, J

机构：

[1] LEP 3 ave. Descartes

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 46卷 / 02期

关键词：

D O I：

10.1016/0022-0248(79)90064-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A fast automatic ellipsometer is associated with an organometallic CVD system for a surface analysis of GaAlAs/GaAs heterostructures during their growth. The capabilities of the ellipsometer are first illustrated: a real time determination of the rate growth and the chemical composition of the layers is obtained. Alternate grwoth of Ga0.64Al0.36As and GaAs layers is examined under various conditions. Interface anomalies are observed when GaAlAs is grown on GaAs while GaAs growth on (Ga,Al)As yields very sharp junctions. These results are compared with recent TEM observations on MBE (GaAs)n-(AlAs)m superlattices. © 1979.

引用

页码：245 / 252

页数：8

共 6 条

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ANDRE JP, C GAAS RELATED COMPO, P1

[2]

AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, pCH4

[3] CRYSTAL-GROWTH KINETICS IN (GAAS)N-(ALAS)M SUPER-LATTICES DEPOSITED BY MOLECULAR-BEAM EPITAXY .1. GROWTH ON SINGULAR (100)GAAS SUBSTRATES [J].

PETROFF, PM ;

GOSSARD, AC ;

WIEGMANN, W ;

SAVAGE, A .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) :5-13

[4]

PETROFF PM, COMMUNICATION

[5] APPARATUS FOR STUDY OF GAAS SURFACES DURING VAPOR-PHASE EPITAXY [J].

THEETEN, JB ;

HOTTIER, F ;

PARADAN, H .

REVUE DE PHYSIQUE APPLIQUEE, 1976, 11 (05) :587-595

[6]

THEETEN JB, UNPUBLISHED

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