TRANSISTOR ACTION OF METAL (COSI2) INSULATOR (CAF2) HOT-ELECTRON TRANSISTOR STRUCTURE

被引：28

作者：

MURATAKE, S

WATANABE, M

SUEMASU, T

ASADA, M

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 11期

关键词：

TRANSISTORS; HOT ELECTRON DEVICES; SEMICONDUCTOR DEVICES;

D O I：

10.1049/el:19920637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first transistor action of tunnelling hot electron transistors with single-crystalline metal (CoSi2)/insulator (CaF2) has been achieved. This device consists of CoSi2/CaF2 heterojunctions grown on n-Si(111) substrate by ionised beam epitaxy for CaF2 and a two step growth technique for CoSi2. Transfer efficiency was more than 0.9 for hot electrons through 1.9 nm-thick CoSi2 metal base layer at 77 K.

引用

页码：1002 / 1004

页数：3

共 9 条

[1] EXPERIMENTAL EVIDENCE OF HOT-ELECTRON TRANSPORT THROUGH THIN METAL-FILMS [J].