HIGH-FIELD CONDUCTIVITY IN GERMANIUM AND SILICON AT MICROWAVE FREQUENCIES

被引：65

作者：

ZUCKER, J

FOWLER, VJ

CONWELL, EM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 12期

关键词：

D O I：

10.1063/1.1728360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2606 / &

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