ELECTROOPTIC PROPERTIES NEAR THE ABSORPTION-EDGE OF GAAS ALGAAS MULTIPLE-QUANTUM-WELL WAVE-GUIDES

被引：23

作者：

BLOEMER, MJ ^{[1
]}

MYNENI, K ^{[1
]}

机构：

[1] APPL RES INC,HUNTSVILLE,AL 35806

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 08期

关键词：

D O I：

10.1063/1.354314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements are reported of the electro-optic properties of multiple-quantum-well p-i-n diodes at wavelengths where the waveguide propagation losses are small, 55-110 meV below the exciton resonance. Electroabsorptive and electrorefractive properties were measured as a function of polarization and crystal propagation direction. The electroabsorption and electrorefraction data show that there is a wavelength bandwidth of approximately 25 nm where the quadratic electro-optic coefficient is large (1-7 X 10(-15) cm2/V2) and the magnitude of the electroabsorption is <0.5 dB/mm for applied fields of up to 1 X 10(5) V/cm. Compact, high-dynamic-range interferometric modulators can be realized in this wavelength band.

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页码：4849 / 4859

页数：11

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