ELECTRICAL AND OPTICAL-PROPERTIES OF BISMUTH SULFIDE [BI2S3] THIN-FILMS PREPARED BY REACTIVE EVAPORATION

被引：50

作者：

LUKOSE, J ^{[1
]}

PRADEEP, B ^{[1
]}

机构：

[1] COCHIN UNIV SCI & TECHNOL, DEPT PHYS, SOLID STATE PHYS LAB, KOCHI 682022, INDIA

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 78卷 / 06期

关键词：

D O I：

10.1016/0038-1098(91)90371-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Polycrystalline stoichiometric Bi2S3 thin films are prepared by reactive evaporation at substrate temperatures ranging from 423 to 473 K. Films prepared at a substrate temperature of 473 K are characterised electrically and optically. A band gap of 1.38 eV is obtained from the electrical and optical studies. From the electrical measurements an activation energy of 0.87 eV is obtained in the temperature range of 273-375 K. Optical absorption studies show that transitions are direct and allowed ones.

引用

页码：535 / 538

页数：4

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