SI AND SIO2 ETCHING CHARACTERISTICS USING REACTIVE ION ETCHING WITH CF4-CL2 GAS-MIXTURE

被引：5

作者：

SHIBAGAKI, M

HORIIKE, Y

机构：

来源：

关键词：

D O I：

10.1143/JJAP.19.1579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1579 / 1580

页数：2

共 8 条

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EPHRATH, LM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421
[3] KINOSHITA H, 1979, JPN J APPL PHYS, V16, P381
[4] KURE T, 1979, 1ST P S DRY PROC, P31
[5] MATSUO S, 1979, 1ST P S DRYPR, P13
[6] MAYER TM, 1979, DEC IEEE INT EL DEV
[7] PARRY PD, 1979, SOLID STATE TECHNOL, V22, P125
[8] COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CF4 PLASMA
SCHWARTZ, GC
ROTHMAN, LB
SCHOPEN, TJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 464 - 469