MAGNETORESISTANCE IN GALLIUM ARSENIDE

被引：14

作者：

WILLARDSON, RK

DUGA, JJ

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1960年 / 75卷 / 482期

关键词：

D O I：

10.1088/0370-1328/75/2/315

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：280 / 290

页数：11

共 17 条

[1] DIE TRANSVERSALEN GALVANOMAGNETISCHEN EFFEKTE IN HALBLEITERN
APPEL, J
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[2] TRANSVERSE MAGNETORESISTANCE AND HALL EFFECT IN N-TYPE INSB
BATE, RT
WILLARDSON, RK
BEER, AC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (02) : 119 - 128
[3] BEER, 1957, PHYS REV, V107, P1506
[4] MAGNETORESISTANCE OF N-TYPE INSB AT 4.2-DEGREES-K
BROOM, RF
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459): : 470 - 475
[5] CALLAWAY J, 1957, J ELECTRONICS, V2, P330
[6] EDMOND JT, 1957, M SEMICONDUCTORS RUG, P109
[7] EMELYANENKO OV, 1958, J TECH PHYS, V28, P1177
[8] HERSTELLUNG UND ELEKTRISCHE EIGENSCHAFTEN VON INP UND GAAS
FOLBERTH, OG
WEISS, H
[J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1955, 10 (08): : 615 - 619
[9] ELECTRICAL PROPERTIES OF P-TYPE INDIUM ANTIMONIDE AT LOW TEMPERATURES
FRITZSCHE, H
LARKHOROVITZ, K
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 400 - 405
[10] THE MAGNETORESISTANCE OF ELECTRONS IN INP AND GAAS
GLICKSMAN, M
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 511 - 515