POINT-DEFECT INJECTION INTO SILICON DUE TO LOW-TEMPERATURE SURFACE MODIFICATIONS

被引：30

作者：

CHRISTENSEN, C

PETERSEN, JW

LARSEN, AN

机构：

[1] Institute of Physics and Astronomy, University of Aarhus

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 12期

关键词：

D O I：

10.1063/1.107559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep level transient spectroscopy has been applied to study the appearance of phosphorus-vacancy pairs in n-type silicon following different low-temperature surface modifications. It is established that at most 10(7) cm-2 vacancy is injected into the bulk of the silicon substrate during Pd2Si silicide formation. On the other hand, phosphorus-vacancies pairs are observed after electron irradiation, low energy ion bombardment, and electron gun evaporation of metal films.

引用

页码：1426 / 1428

页数：3

共 16 条

[1]

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[2]

CHANTRE A, 1982, P MATER RES SOC, V14, P547

[3]

FERENCZI G, 1986, PHYS STATUS SOLIDI A, V94, P606

[4] PLATINUM-SILICIDE FORMATION DURING RAPID THERMAL ANNEALING - DEPENDENCE ON SUBSTRATE ORIENTATION AND PRE-IMPLANTED IMPURITIES [J].