BISTABLE SWITCHING AND CONDUCTION MECHANISMS IN NB-NB2O5-BI JUNCTIONS

被引:18
作者
BASAVAIA.S [1 ]
PARK, KC [1 ]
机构
[1] IBM CORP,TJ WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598
关键词
D O I
10.1109/T-ED.1973.17622
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:149 / 157
页数:9
相关论文
共 29 条
[1]   SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].
ARGALL, F .
SOLID-STATE ELECTRONICS, 1968, 11 (05) :535-&
[2]   CURRENT FILAMENTS IN SEMICONDUCTORS [J].
BARNETT, AM .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) :522-+
[3]  
CHYNOWETH AG, 1960, PROGRESS SEMICONDUCT, V4, P95
[4]  
CUOMO JJ, 1971, RC3418 IBM REP
[5]   ELECTRICAL SWITCHING PHENOMENA IN TRANSITION METAL GLASSES UNDER INFLUENCE OF HIGH ELECTRIC FIELDS [J].
DRAKE, CF ;
SCANLAN, IF ;
ENGEL, A .
PHYSICA STATUS SOLIDI, 1969, 32 (01) :193-&
[6]   SWITCHING PROPERTIES OF THIN NIO FILMS [J].
GIBBONS, JF ;
BEADLE, WE .
SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&
[7]   BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES [J].
HIATT, WR ;
HICKMOTT, TW .
APPLIED PHYSICS LETTERS, 1965, 6 (06) :106-&
[8]   ELECTROLUMINESCENCE AND CONDUCTION IN NB-NB2O5-AU DIODES [J].
HICKMOTT, TW .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (12) :4380-&
[9]  
HICKMOTT TW, 1970, SOLID STATE ELECTRON, V7, P1033
[10]  
Hill RM., 1967, THIN SOLID FILMS, V1, P39, DOI [10.1016/0040-6090(67)90019-3, DOI 10.1016/0040-6090(67)90019-3]