RADIATION STABILITY OF A2(III)B3(VI) SEMICONDUCTORS

被引：14

作者：

KOSHKIN, VM

GALCHINETSKII, LP

KULIK, VN

ULMANIS, UA

机构：

[1] ALL UNION MONOCRYSTAL INST,KHARKOV,UKSSR

[2] ACAD SCI LASSR,PHYS INST,RIGA,LASSR

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 29卷 / 01期

关键词：

D O I：

10.1080/00337577608233475

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：1 / 6

页数：6

共 23 条

[1]

ATROSCHENKO LV, 1970, PROBLEMY PROCHNOSTI, P95

[2]

ATROSHCHENKO LV, 1967, IAN SSSR NEORG MATER, V3, P777

[3]

ATROSHCHENKO LV, 1965, IAN SSSR NEORG MATER, V1, P2140

[4]

BILLINGTON DS, 1961, RADIATION DAMAGES SO

[5]

GALCHINE.LP, 1972, FIZ TVERD TELA+, V14, P646

[6]

GALCHINETSKII LP, 1970, IZVESTIJA AKAD NA NM, V6, P860

[7]

GALCHINETSKII LP, 1972, MONOKRISTALLY TECHNI, V6, P97

[8] DYNAMICS OF RADIATION DAMAGE [J].

GIBSON, JB ;

GOLAND, AN ;

MILGRAM, M ;

VINEYARD, GH .

PHYSICAL REVIEW, 1960, 120 (04) :1229-1253

[9]

ISCHINO S, 1963, J PHYS CHEM SOLIDS, V24, P1033

[10]

Koshkin V. M., 1970, Fizika Tverdogo Tela, V12, P1536