NEURON-LIKE TRANSIENT PHENOMENA IN SILICON P-I-N STRUCTURES

被引：5

作者：

COON, DD

PERERA, AGU

机构：

[1] Univ of Pittsburgh, Pittsburgh, PA,, USA, Univ of Pittsburgh, Pittsburgh, PA, USA

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 05期

关键词：

Acknowledgements--aTuhteh orsh aveb enefitefdr omcon-versation witBh. Goldstein anRd. DevatyT. his work was supporteidn partb ytheU .S. NationaSl cienceF oundation under grant No: ECS-8603075a nd U.S. Departmenotf Energyu nder contraNcto . DE-ACO2-80ERI0667;

D O I：

10.1016/0038-1101(88)90038-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

28

引用

收藏

页码：851 / 862

页数：12

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