ELECTRICAL TRIMMING OF HEAVILY DOPED POLYCRYSTALLINE SILICON RESISTORS

被引：35

作者：

AMEMIYA, Y

ONO, T

KATO, K

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo 180, Midori-cho

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 11期

关键词：

D O I：

10.1109/T-ED.1979.19679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The newly discovered phenomenon of resistance decrease in heavily doped polycrystalline silicon resistors by conduction of high current densiy has been investigated experimentally. Threshold values exist for the impurity concentration and for the applied current density for the occurrence of this phenomenon. Decreased resistance is stable as far as current higher than the threshold value is not applied thereafter. Applications to D/A converters and operational amplifiers are described. Electrical trimming of resistors in the circuits with accuracy of ±0.01 percent is easily attained. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1738 / 1742

页数：5