CONFINEMENT AND COULOMB INTERACTIONS IN SCHOTTKY-GATED, LATERALLY CONFINED DOUBLE-BARRIER QUANTUM-WELL HETEROSTRUCTURES

被引：6

作者：

GUERET, P

BLANC, N

GERMANN, R

ROTHUIZEN, H

机构：

[1] IBM Res. Div., Zurich Res. Lab.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conductance of laterally confined double-barrier quantum well resonant tunnelling heterostructures is investigated. The lateral confinement is provided by a Schottky gate and can be varied in a continuous way. Data for dots with nominal diameters in the submicrometre range are reported.

引用

页码：B462 / B464

页数：3

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