ON THE DONOR ACTIVITY OF OXYGEN IN SILICON AT TEMPERATURES FROM 500 TO 800-DEGREES-C

被引：29

作者：

SCHMALZ, K

GAWORZEWSKI, P

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 64卷 / 01期

关键词：

D O I：

10.1002/pssa.2210640116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：151 / 158

页数：8

共 24 条

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[5] ON THE KINETICS OF THERMAL DONORS IN OXYGEN-RICH SILICON IN THE RANGE FROM 450-DEGREES-C TO 900-DEGREES-C [J].

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[6]

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GAWORZEWSKI P, UNPUBLISHED

[8] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

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[9] COMPARISON OF 2 KINDS OF OXYGEN DONORS IN SILICON BY RESISTIVITY MEASUREMENTS [J].

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