STM APPLICATIONS FOR SEMICONDUCTOR-MATERIALS AND DEVICES

[1] A 2-STEP OXIDATION PROCESS TO IMPROVE THE ELECTRICAL BREAKDOWN PROPERTIES OF THIN OXIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1900 - 1903

[2] BINNIG G, 1986, IBM J RES DEV, V30, P355

[3] BINNIG G, 1986, SURF SCI, V169, P295

[4] MICROELECTRONIC PACKAGING [J]. SCIENTIFIC AMERICAN, 1983, 249 (01) : 86 - &

[5] MOSFET MINIATURIZATION - FROM ONE MICRON TO THE LIMITS [J]. PHYSICA B & C, 1985, 129 (1-3): : 3 - 15

[6] SURFACE-MORPHOLOGY OF OXIDIZED AND ION-ETCHED SILICON BY SCANNING TUNNELING MICROSCOPY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 97 - 99

[7] SCANNING TUNNELING MICROSCOPY OF NANOCRYSTALLINE SILICON SURFACES [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 795 - 800

[8] HENBERGER A, 1986, SOLID STATE TECHNOL, V29, P93

[9] Ho P. S., 1982, 1982 International Reliability Physics Symposium. 20th Annual Proceedings, P288

[10] HOFMANN K, IN PRESS APPL PHYS L

[1] A 2-STEP OXIDATION PROCESS TO IMPROVE THE ELECTRICAL BREAKDOWN PROPERTIES OF THIN OXIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1900 - 1903

[2] BINNIG G, 1986, IBM J RES DEV, V30, P355

[3] BINNIG G, 1986, SURF SCI, V169, P295

[4] MICROELECTRONIC PACKAGING [J]. SCIENTIFIC AMERICAN, 1983, 249 (01) : 86 - &

[5] MOSFET MINIATURIZATION - FROM ONE MICRON TO THE LIMITS [J]. PHYSICA B & C, 1985, 129 (1-3): : 3 - 15

[6] SURFACE-MORPHOLOGY OF OXIDIZED AND ION-ETCHED SILICON BY SCANNING TUNNELING MICROSCOPY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 97 - 99

[7] SCANNING TUNNELING MICROSCOPY OF NANOCRYSTALLINE SILICON SURFACES [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 795 - 800

[8] HENBERGER A, 1986, SOLID STATE TECHNOL, V29, P93

[9] Ho P. S., 1982, 1982 International Reliability Physics Symposium. 20th Annual Proceedings, P288

[10] HOFMANN K, IN PRESS APPL PHYS L