PARAMAGNETIC CENTERS IN NEUTRON-IRRADIATED GLASSY SEMICONDUCTORS

被引：3

作者：

DURNY, R

MACKO, P

MACKOVA, V

机构：

[1] Department of Physics, Slovak Technical University, 880 19 Bratislava

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 03期

关键词：

D O I：

10.1016/0038-1098(79)90428-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

EPR was used for investigation of neutron irradiated glassy semiconductors (En = 2 MeV). It was shown that the neutron irradiation causes an increased number of unpaired spins: EPR signal was detected in glassy semiconductors which have not exhibited any signal before irradiation. A possible interpretation of the formation of paramagnetic centers due to neutron irradiation is suggested. © 1979.

引用

页码：173 / 174

页数：2

共 7 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].