HIGH-PURITY, SINGLE-CRYSTAL INP GROWN BY SYNTHESIS SOLUTE DIFFUSION

被引：4

作者：

ENGH, RO

PETERSON, SR

THORNE, JP

PETERSEN, PE

机构：

来源：

关键词：

D O I：

10.1063/1.92330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：243 / 245

页数：3

共 7 条

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[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 884 - 890
[3] KANEKO K, 1979, J ELECTROCHEM SOC, V121, P556
[4] MARSHALL AJ, 1978, J CRYST GROWTH, V44, P651
[5] Rode D. L., 1975, SEMICONDUCT SEMIMET, V10, P1
[6] ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN INP - DETERMINATION OF THE COMPENSATION RATIO
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RAVA, P
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GATOS, CH
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2659 - 2668
[7] INP SINGLE-CRYSTAL GROWTH BY SYNTHESIS, SOLUTE DIFFUSION METHOD
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UEMURA, C
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) : 1869 - 1870