STRUCTURE OF RECONSTRUCTED SI(001)2 BY 1 AND GE(001)2 BY 1 SURFACES

被引：72

作者：

JONA, F ^{[1
]}

SHIH, HD ^{[1
]}

JEPSEN, DW ^{[1
]}

MARCUS, PM ^{[1
]}

机构：

[1] IBM CORP,CTR RES,POB 218,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 12期

关键词：

D O I：

10.1088/0022-3719/12/12/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Full dynamical LEED intensity calculations have been carried out on Si(001) and Ge(001) surfaces distorted from bulk in the first three layers as in the surface-dimer model proposed previously. Comparison with experimental data indicates that for Si(001), the model produces the best agreement achieved so far, but the overall agreement is not good enough to qualify as satisfactory. For Ge(001) there is practically no agreement with experiment. Variations of the dimer model are suggested which introduce distortions with 2*2 and c(4*2) periodicities and explain qualitatively a number of experimental observations, although no quantitative model has been found that reproduces satisfactorily the experimental LEED intensity data available.

引用

页码：L455 / L461

页数：7

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