NEUTRON-DIFFRACTION, INFRARED, AND RAMAN-SCATTERING INVESTIGATIONS OF THE LAYERED GASXSE1-X SYSTEM

被引：22

作者：

ABDULLAEV, GB

ALLAKHVERDIEV, KR

NANI, RK

SALAEV, EY

TAGYEV, MM

机构：

[1] Institute of Physics, Academy of Sciences

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1979年 / 53卷 / 02期

关键词：

D O I：

10.1002/pssa.2210530218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystals of layered GaSxSe1−x (0 ≦ × ≦ 1) mixed system are grown using Bridgman technique. The identification of pure GaSe polytype is made by help of neutron diffraction, long‐wavelength infrared, and Raman scattering spectroscopy. It is shown that the system investigated is characterized by an unusual one‐ and two‐mode behaviour at the same time. The region of transformation from ϵ‐GaSe to GaS in GaSxSe1−x systems is discussed taking into account the results of neutron diffraction, infrared, and Raman investigations. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：549 / 555

页数：7

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