METALORGANIC CHEMICAL VAPOR-DEPOSITION OF DOUBLE-SIDED YBA2CU3O7 THIN-FILMS

Thin films of YBa2Cu3O7-delta were deposited on both sides of (100) LaAlO3 substrates by metalorganic chemical vapor deposition. Using a gold-coated wafer carrier, improvements in both the transition temperature and critical current density of the film exposed to the carrier (first side) were demonstrated. T(c)'s of 86-88 K and J(c)'s > 10(6) A/cm2 at 77 K were achieved. The microwave surface resistance of both sides of double-sided samples measured at 77 K was approximately 8 mOMEGA at 36 GHz, scaling to less than 700 muOMEGA at 10 GHz.