ANALYSIS OF THE R0A PRODUCT IN N+-P HG1-XCDXTE PHOTODIODES

The influence of different junction current components (diffusion current for radiative and Auger 7 recombination mechanisms, tunneling and depletion layer currents) on the R//0A product of n** plus -p-Hg//1// minus //xTe photodiodes is considered. The considerations are carried out for the 77-300 K temperature region and 1-15 mu m cutoff wavelength. Optimum doping concentrations in the p-type region of n** plus -p abrupt junctions are determined, taking into account the influence of the tunneling current and of a fixed surface charge density of the junction passivation layer. Results of calculations are compared with experimental data reported by many authors. An attempt is made to explain the discrepancy between theoretical calculations and experimental data.