OXYGEN-ADSORPTION ON CS COVERED GAAS(110) SURFACES

被引：59

作者：

SU, CY

CHYE, PW

PIANETTA, P

LINDAU, I

SPICER, WE

机构：

[1] Stanford Electronics Laboratories, Stanford University, Stanford

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90472-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cs covered GaAs(110) was exposed to oxygen and studied with soft X-ray photoemission (SXPS). Oxygen was found to bond to the surface As atoms with 106 times greater initial oxygen uptake. A second Cs layer added after the Cs/GaAs (110) surface had been exposed to oxygen brings effects similar to the oxidation of GaAs by excited oxygen. Possible inadequacies of the conventional models of NEA photocathodes assuming noninteracting substrate and Cs2O layer are discussed. © 1979.

引用

页码：894 / 899

页数：6

共 12 条

[1] OXIDATION OF CS-UV PHOTOEMISSION STUDIES [J].