ANOMALOUS REGIMES FOR GAAS ETCHING IN CL2-AR PLASMAS

被引：7

作者：

DAGOSTINO, R ^{[1
]}

CRAMAROSSA, F ^{[1
]}

FRACASSI, F ^{[1
]}

ILLUZZI, F ^{[1
]}

ARMENISE, MN ^{[1
]}

机构：

[1] UNIV BARI,DIPARTIMENTO ELETTROTECN & ELETTRON,I-70125 BARI,ITALY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 05期

关键词：

D O I：

10.1116/1.584187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1584 / 1591

页数：8

共 21 条

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