DIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XAS

被引：193

作者：

BOSIO, C

STAEHLI, JL

GUZZI, M

BURRI, G

LOGAN, RA

机构：

[1] UNIV LAUSANNE,INST PHYS EXPTL,BSP DORIGNY,CH-1015 LAUSANNE,SWITZERLAND

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

[3] UNIV MILAN,DEPARTIMENTO FIS,I-20133 MILANO,ITALY

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.38.3263

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3263 / 3268

页数：6

共 24 条

[1] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS
ABSTREITER, G
BAUSER, E
FISCHER, A
PLOOG, K
[J]. APPLIED PHYSICS, 1978, 16 (04): : 345 - 352
[2] QUANTITATIVE-ANALYSIS OF ALXGA1-XAS BY AUGER-ELECTRON SPECTROSCOPY
ARTHUR, JR
LEPORE, JJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 979 - 984
[3] ENERGY-BAND STRUCTURE OF ALXGA1-XAS
BALDERESCHI, A
HESS, E
MASCHKE, K
NEUMANN, H
SCHULZE, KR
UNGER, K
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23): : 4709 - 4717
[4] ELECTROREFLECTANCE SPECTRA OF ALXGA1-X AS ALLOYS
BEROLO, O
WOOLLEY, JC
[J]. CANADIAN JOURNAL OF PHYSICS, 1971, 49 (10) : 1335 - &
[5] CASEY HC, 1978, HETEROSTRUCTURE LA A, pCH4
[6] DINGLE R, 1977, 6TH P INT S GAAS REL, V33, P210
[7] HELLWEGE KH, 1987, LANDOLTBORNSTEIN N A, V22
[8] ENERGY-GAP VARIATIONS IN SEMICONDUCTOR ALLOYS
HILL, R
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03): : 521 - 526
[9] DEPENDENCE OF THE ALXGA1-XAS BAND EDGE ON ALLOY COMPOSITION BASED ON THE ABSOLUTE MEASUREMENT OF X
KUECH, TF
WOLFORD, DJ
POTEMSKI, R
BRADLEY, JA
KELLEHER, KH
YAN, D
FARRELL, JP
LESSER, PMS
POLLAK, FH
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 505 - 507
[10] OPTICAL DETERMINATION OF THE ALXGA1-XAS ENERGY-GAP VARIATION VERSUS THE AL CONCENTRATION IN MBE-GROWN SAMPLES
LAMBERT, B
CAULET, J
REGRENY, A
BAUDET, M
DEVEAUD, B
CHOMETTE, A
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (08) : 491 - 493