STATISTICS OF INTER-IMPURITY RECOMBINATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS

被引：8

作者：

KARAGEOG.PM

LEIDERMA.AY

机构：

[1] Institute of Technical Physics, Academy of Sciences of Uzbek SSR

来源：

PHYSICA STATUS SOLIDI | 1968年 / 26卷 / 02期

关键词：

D O I：

10.1002/pssb.19680260204

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recombination statistics for semiconductors are derived taking into account transitions between impurities forming spatially localized recombination pairs. Expressions for the recombination rate and lifetime are given. The cases of weak and strong deviations from the thermodynamic equilibrium are studied. Copyright © 1968 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：419 / &

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