EFFECT OF INJECTION CURRENT ON THE DIELECTRIC-CONSTANT OF AN INBUILT WAVEGUIDE IN TWIN-TRANSVERSE-JUNCTION STRIPE LASERS

被引:33
作者
TURLEY, SEH
THOMPSON, GHB
LOVELACE, DF
机构
[1] Standard Telecommunication Laboratories Ltd., Harlow, Essex, CM17 9NA, London Road
关键词
Optical waveguides; Permittivity; Semiconductor junction lasers;
D O I
10.1049/el:19790181
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An investigation has been made of the role of injected carriers in reducing the effective dielectric constant of the inbuilt waveguide of a (GaAl)As double-heterostructure twin-transverse-junction (t.t.j.) stripe laser fabricated by deep Zn diffusion. The technique employed in this study is the measurement of the spectral shift of each Fabry-Perot mode as a function of drive current. The results show that the injected carriers contribute (Δε)c = −5-92 × 10−2 to the effective dielectric constant of the waveguide at threshold. © 1979, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:256 / 257
页数:2
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