TOTAL SIMULATION-MODEL OF HIGH-PRESSURE LIQUID ENCAPSULATED CZOCHRALSKI CRYSTAL-GROWTH

A numerical model has been made to determine the effect of various geometric and thermal variables. The model consists of the following three blocks: (1) the the entire furnace system in which entire temperature distributions were calculated considering the effects of radiative heat exchange and gas flow; (2) a crystal and melt system in which temperature distributions and the crystal/melt interface were calculated, (3) thermal stress analysis by which resolved shear stress is obtained. Calculated results were in good agreement with experimental results; the temperature response to the change of heater power, the crystal/melt interface shape which was observed from growth striations and etch-pit densities on 4 inch diameter (100) oriented GaAs wafers. © 1990, Elsevier Science Publishers B.V.. All rights reserved.