DUAL-GATE DEPLETION-MODE DMOS TRANSISTOR FOR LINEAR GAIN-CONTROL APPLICATION

被引：2

作者：

KWAN, SH ^{[1
]}

CHUANG, CT ^{[1
]}

MULLER, RS ^{[1
]}

WHITE, RM ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 07期

关键词：

D O I：

10.1109/T-ED.1979.19544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A conveniently implemented means is described for ob-taining linear voltage control over the gain of dual-gate DMOS transistor amplifiers. This approach is applicable to surface acoustic wave (SAW) transversal filters and signal-processing modules. The system makes use of dual-gated, depletion-mode, n-channel, DMOS transistors. When two dual-gate DMOST's with their associated transducers are connected in a suitable differencing circuit, the gain (tap weight) depends linearly upon an applied control voltage to a deviation of only ±1 dB over a dynamic range of more than 50 dB. This linear property greatly simpli-fies the setting of tap weights in a transversal filter and provides versa-tility for acoustic-wave signal processing. A simple four-transistor model is proposed for the dual-gate DMOST. Theoretical analysis agrees well with experimental results and justifies the validity of the differencing scheme. An analytical solution for the device transconduc-tance as a function of the control voltage is derived. Analysis based on this model gives insight into the operation of the dual-gate DMOST, and the design and optimization of the sensor and amplifying devices. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1053 / 1058

页数：6

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