EXPERIMENTS AND CALCULATION OF GA-GAAS-GAP TERNARY PHASE-DIAGRAM

被引:18
作者
OSAMURA, K
INOUE, J
MURAKAMI, Y
机构
关键词
D O I
10.1149/1.2404112
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:103 / &
相关论文
共 21 条
[1]   GA-GAP-GAAS TERNARY PHASE DIAGRAM [J].
ANTYPAS, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :700-&
[2]   LIQUID-PHASE EPITAXY OF INXGA1-XAS [J].
ANTYPAS, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) :1393-&
[3]   LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER [J].
ANTYPAS, GA ;
JAMES, LW .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2165-&
[4]   VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].
ARTHUR, JR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&
[5]  
DARKEN LS, 1967, T METALL SOC AIME, V239, P90
[6]   EFFECT OF ARSENIC PRESSURE ON SOLUBILITY OF COPPER IN GAAS [J].
FURUKAWA, Y ;
THURMOND, CD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (09) :1535-&
[8]  
ILEGEMS M, 1968 P GALL ARS S, P3
[9]   STUDY OF PHASE DIAGRAM OF GAAS-GASB QUASI-BINARY SYSTEM [J].
INOUE, J ;
OSAMURA, K ;
MURAKAMI, Y .
TRANSACTIONS OF THE JAPAN INSTITUTE OF METALS, 1971, 12 (01) :13-&
[10]  
KOSTER W, 1955, Z METALLKD, V46, P291