STOICHIOMETRIC EFFECTS ON THE PROPERTIES OF COPPER BASED CHALCOPYRITE I-III-VI2 SEMICONDUCTOR THIN-FILMS

被引：9

作者：

LOFERSKI, JJ

机构：

[1] Division of Engineering, Brown University, Providence

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 13卷 / 04期

关键词：

D O I：

10.1016/0921-5107(92)90127-U

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and optoelectronic properties of CuInSe2, CuInS2, CuGaSe2 and their alloys can be readily controlled by adjusting the stoichiometry of the materials, sometimes by small amounts as in the case of the chalcogenide constituent, sometimes by large amounts as in the case of the copper content. The main movitation for research on these materials is their promise as the active semiconductor of thin film photovoltaic solar cells. The paper reviews investigations of the effects of stoichiometry on the properties of these materials and on their performance in solar cells.

引用

页码：271 / 277

页数：7

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