PHOTOCONDUCTIVITY IN POLYSILANES WITH ATTACHED PI CONJUGATED CHROMOPHORES

被引：14

作者：

PFLEGER, J ^{[1
]}

KMINEK, I ^{[1
]}

NESPUREK, S ^{[1
]}

SCHNABEL, W ^{[1
]}

机构：

[1] HAHN MEITNER INST KERNFORSCH BERLIN GMBH, W-1000 BERLIN 39, GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRICAL INSULATION | 1992年 / 27卷 / 04期

关键词：

D O I：

10.1109/14.155810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The photogeneration of charge carriers and the electronic transport in new derivatives of polymethylphenylsilane was studied. The strong increase in the photoelectrical sensitivity of the polysilanes with attached nitro substituted pi-conjugated pendant groups was observed. The transport of charge carriers was found to be dispersive.

引用

页码：856 / 860

页数：5

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