PHOSPHORUS VACANCIES AND ADATOMS ON GAP(110) SURFACES STUDIED BY SCANNING TUNNELING MICROSCOPY

被引:34
作者
EBERT, P
URBAN, K
机构
[1] Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, W-5170 Jülich
关键词
D O I
10.1016/0304-3991(93)90240-X
中图分类号
TH742 [显微镜];
学科分类号
摘要
Atomic defects were investigated on p-doped GaP(110) surfaces by scanning tunneling microscopy. The defects were identified as positively charged phosphorus vacancies and uncharged phosphorus adatoms. They are found to migrate on the phosphorus sublattice. Their motion was observed with atomic resolution and the dependence of the jump probability on the tunneling voltage was measured. The position changes of the defects were found to be induced by tip-specimen interactions.
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页码:344 / 353
页数:10
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