WRITING IMPLANTATION WITH A HIGH-CURRENT DENSITY FOCUSED ION-BEAM

被引：17

作者：

BISCHOFF, L

HESSE, E

PANKNIN, D

SKORUPA, W

TEICHERT, J

机构：

[1] Research Center Rossendorf Inc. Institute for Ion Beam Physics and Material Research, D-01314 Dresden

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

Cobalt - Focusing - Ion beams - Ion sources - Microstructure - Silicon compounds - Silicon on insulator technology - Thermal effects;

D O I：

10.1016/0167-9317(94)90117-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Rossendorf Focused Ion Beam IMSA-100 was used for writing implantation of cobalt (E = 30 keV Co+ and 60 keV Co++; D = 0.5 ... 5 x 10(17) cm(-2)) at room temperature to form CoSi2 microstructures on silicon by ion beam synthesis. For that aim two types of Liquid Alloy Ion Sourses (LAIS) were developed. As implanted and annealed (600 degrees C for 60 min and 1000 degrees C for 30 min in N-2 atmosphere) silicide structures were analysed by SEM, EDX and electrical measurements.

引用

页码：115 / 118

页数：4