A POSSIBLE PHASE-TRANSITION IN METALLIC POLYTHIOPHENE AND POLY(3-METHYLTHIOPHENE) AT LOW-TEMPERATURE

被引：11

作者：

MASUBUCHI, S

KAZAMA, S

机构：

[1] Department of Physics, Chuo University, Bunkyo-ku, Tokyo

来源：

SYNTHETIC METALS | 1995年 / 69卷 / 1-3期

关键词：

D O I：

10.1016/0379-6779(94)02466-C

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have made an experimental study on the transport properties in as-grown polythiophene and poly(3-methylthiophene) films doped with PF6.. Precise measurements were made of the four-terminal DC resistivity, the Voltage-Shorted-Compaction resistivity and the absolute thermoelectric power between 1.6-300K with an aim to abstract the transport properties inherent to the crystallized regions of polymeric materials. The results are strongly indicative of the occurrence of a metal-insulator transition within the crystallized (metallic) regions at low temperatures. The difference in the transport property of bulk materials is understood by their different transition temperatures.

引用

页码：315 / 316

页数：2

共 5 条

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