THE EFFECT OF LEVEL BROADENING ON THE TUNNELING OF ELECTRONS THROUGH SEMICONDUCTOR DOUBLE-BARRIER QUANTUM-WELL STRUCTURES

被引：16

作者：

GUPTA, R

RIDLEY, BK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3089 / 3097

页数：9

共 16 条

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